H-端接 SCD 外延片 — intrinsic epi with surface 2D hole gas (visual identity shared with SCD plate per handbook)
H-端接 SCD 外延片 — intrinsic epi with surface 2D hole gas (visual identity shared with SCD plate per handbook)
Hydrogen termination of the diamond surface creates a thin layer of mobile holes (二維空穴氣) just below the surface. This is the basis of the famous H-diamond FET — a p-channel transistor with high mobility and low power consumption.
Hydrogen-terminated surface creates a high-mobility p-type channel. The 二維空穴氣 layer enables room-temperature H-diamond FET operation with carrier mobilities orders of magnitude higher than bulk p-doped diamond.
Room-temperature p-channel transistors for RF, high-frequency, and low-power applications. The 二維空穴氣 channel enables fast switching and low on-resistance in the p-channel configuration.
We engineer the surface hydrogenation conditions for consistent 二維空穴氣 performance. Plasma vs wet-chemical termination, hydrogen plasma power, and surface preparation all affect final channel characteristics.
H-端接 diamond enables p-channel transistors and 射頻肖特基二極管s with high mobility and room-temperature operation.
射頻、高頻、低功率
p-channel field-effect transistors with 二維空穴氣 surface channel. High mobility, fast switching, low on-resistance. For RF amplifiers, high-frequency switches, and low-power logic.
射頻和高頻整流
肖特基二極管s on H-端接 intrinsic epi. The clean intrinsic surface (no bulk doping) gives lower reverse leakage and faster switching for 射頻和高頻整流.
H-surface states, 二維空穴氣 physics
H-termination enables quantum-effect devices exploiting the 二維空穴氣 surface states. For research applications in diamond surface physics and quantum sensing.
我們的 SCD 外延片 (B-doped) 使用摻硼p+襯底,用於功率肖特基二極管、p-n二極管、PiN二極管和p溝道垂直MOSFET。兩種襯底變體共享金剛石外延基礎 — 不同的摻雜,不同的應用重點。
登錄 to see the standard H-termination processes, intrinsic layer thickness ranges, and 二維空穴氣 mobility targets. Custom DFM available for partner-specified device targets.