H-terminated SCD Epi Wafer — intrinsic epi with surface 2D hole gas (visual identity shared with SCD plate per handbook)
H-terminated SCD Epi Wafer — intrinsic epi with surface 2D hole gas (visual identity shared with SCD plate per handbook)
Hydrogen termination of the diamond surface creates a thin layer of mobile holes (2DHG) just below the surface. This is the basis of the famous H-diamond FET — a p-channel transistor with high mobility and low power consumption.
Hydrogen-terminated surface creates a high-mobility p-type channel. The 2DHG layer enables room-temperature H-diamond FET operation with carrier mobilities orders of magnitude higher than bulk p-doped diamond.
Room-temperature p-channel transistors for RF, high-frequency, and low-power applications. The 2DHG channel enables fast switching and low on-resistance in the p-channel configuration.
We engineer the surface hydrogenation conditions for consistent 2DHG performance. Plasma vs wet-chemical termination, hydrogen plasma power, and surface preparation all affect final channel characteristics.
H-terminated diamond enables p-channel transistors and RF Schottky diodes with high mobility and room-temperature operation.
RF, high-frequency, low-power
p-channel field-effect transistors with 2DHG surface channel. High mobility, fast switching, low on-resistance. For RF amplifiers, high-frequency switches, and low-power logic.
RF and high-frequency rectification
Schottky diodes on H-terminated intrinsic epi. The clean intrinsic surface (no bulk doping) gives lower reverse leakage and faster switching for RF and high-frequency rectification.
H-surface states, 2DHG physics
H-termination enables quantum-effect devices exploiting the 2DHG surface states. For research applications in diamond surface physics and quantum sensing.
Our SCD Epi Wafer (B-doped) uses boron-doped p+ substrate for power Schottky diodes, p-n diodes, PiN diodes, and p-channel vertical MOSFETs. Both substrate variants share the diamond epi foundation — different doping, different application focus.
Sign in to see the standard H-termination processes, intrinsic layer thickness ranges, and 2DHG mobility targets. Custom DFM available for partner-specified device targets.