H-端接 SCD 外延片 — intrinsic epi with surface 2D hole gas (visual identity shared with SCD plate per handbook)
H-端接 SCD 外延片 — intrinsic epi with surface 2D hole gas (visual identity shared with SCD plate per handbook)
Hydrogen termination of the diamond surface creates a thin layer of mobile holes (二维空穴气) just below the surface. This is the basis of the famous H-diamond FET — a p-channel transistor with high mobility and low power consumption.
Hydrogen-terminated surface creates a high-mobility p-type channel. The 二维空穴气 layer enables room-temperature H-diamond FET operation with carrier mobilities orders of magnitude higher than bulk p-doped diamond.
Room-temperature p-channel transistors for RF, high-frequency, and low-power applications. The 二维空穴气 channel enables fast switching and low on-resistance in the p-channel configuration.
We engineer the surface hydrogenation conditions for consistent 二维空穴气 performance. Plasma vs wet-chemical termination, hydrogen plasma power, and surface preparation all affect final channel characteristics.
H-端接 diamond enables p-channel transistors and 射频肖特基二极管s with high mobility and room-temperature operation.
射频、高频、低功率
p-channel field-effect transistors with 二维空穴气 surface channel. High mobility, fast switching, low on-resistance. For RF amplifiers, high-frequency switches, and low-power logic.
射频和高频整流
肖特基二极管s on H-端接 intrinsic epi. The clean intrinsic surface (no bulk doping) gives lower reverse leakage and faster switching for 射频和高频整流.
H-surface states, 二维空穴气 physics
H-termination enables quantum-effect devices exploiting the 二维空穴气 surface states. For research applications in diamond surface physics and quantum sensing.
我们的 SCD 外延片 (B-doped) 使用掺硼p+衬底,用于功率肖特基二极管、p-n二极管、PiN二极管和p沟道垂直MOSFET。两种衬底变体共享金刚石外延基础 — 不同的掺杂,不同的应用重点。
登录 to see the standard H-termination processes, intrinsic layer thickness ranges, and 二维空穴气 mobility targets. Custom DFM available for partner-specified device targets.