Custom multi-layer CVD epitaxial growth for advanced heterostructures. The service that powers our Diamond IC封裝蓋板 product line — combining thermal sensing, EMI absorption, and electrical insulation in a single monolithic diamond structure.
定製多層外延生長 — engineered heterostructures (powers Diamond IC封裝蓋板)
我們的 multi-layer epitaxy service grows multiple doped and undoped diamond layers in a single deposition run. Each layer is engineered for a specific function — thermal sensing, EMI absorption, or electrical insulation.
Replaces bulky multi-component assemblies (heat sink + microwave absorber + insulator) with a single monolithic diamond structure.
Embedded doped layers enable in-situ temperature monitoring without external sensors. Direct die-level thermal telemetry.
Partner with our process team to design layer stacks for your specific application. From prototype runs to volume production.
Multi-layer epitaxy enables each layer to perform a distinct function — combined into a single monolithic diamond structure.
Embedded temperature monitoring
Boron-doped diamond layer engineered for direct temperature measurement. Enables real-time thermal telemetry at the die level.
Microwave attenuation
中-doped BDD layer absorbs high-frequency EMI that metal lids reflect. Prevents cavity resonance and internal crosstalk.
Pure diamond thermal path
Pure (or lightly-doped) diamond layers provide both electrical insulation and the thermal spreading path. >2000 W/m·K through-plane conductivity.
登錄 to see standard multi-layer stack recipes, layer-thickness ranges, doping profiles, and per-part pricing tiers.