SCD Diamond Wafers
Breaking the 15mm Size Barrier

Ultra-Large Format
SCD Diamond Wafers

Up to 100mm round wafers and 80×80mm plates bringing the ultimate thermal conductor (>2200 W/m·K) into Wafer-Level Packaging and massive AI interposers.

Beyond Silicon. Beyond Scale.

Historical diamond wafers were limited to 15mm—useless for modern AI packaging. Our 100mm CVD technology changes everything.

Up to 100mm / 4-Inch

100mm round wafers and 60×60mm to 80×80mm rectangular plates for wafer-level packaging (WLP) and monolithic interposers.

>2200 W/m·K Thermal Conductivity

Single-crystal diamond delivers the highest thermal conductivity of any material—spreading hotspots evenly across entire substrates.

Epi-Ready Surface (Ra ~1nm)

Our Option A surface achieves Ra ~1nm with ±0.05mm thickness tolerance—enabling atomic-level direct bonding for GaN-on-Diamond.

Form Factors

Geometry & Dimensions

Our Ultra-Large Format SCD wafers are available in two standard geometries, with custom shapes available via Custom DFM.

Standard Geometries

  • • 100mm Round Wafers: For standard semiconductor fab processing
  • • Rectangular Plates: 60×60mm to 80×80mm for rectangular die attach
  • • Custom Shapes: Octagonal and irregular geometries available

Specification Options

Option A: Epi-Ready
Surface Roughness (Ra) ~1 nm
Thickness Tolerance ±0.05 mm
Target Application Optical / Epitaxy
Option B: Mechanical
Surface Roughness (Ra) ~5 nm
Thickness Tolerance ±0.03 mm
Target Application Thermal Spreading
Thickness Options
Standard Range 100 µm – 500 µm
Custom Lapping Available on request
Matched Parts & Applications

Engineered for Next-Gen AI Packaging

Our 100mm SCD wafers enable wafer-level packaging, GaN-on-Diamond integration, and extreme-power testing.

Monolithic AI Chip / GPU Interposers

2.5D/3D Advanced Packaging for AI accelerators

A contiguous 80×80mm SCD plate spreads extreme localized heat (hotspots) from the GPU die evenly across the substrate, preventing thermal throttling and protecting adjacent HBM stacks.

Engineered Semiconductor Substrates

GaN-on-Diamond or Silicon-on-Diamond

The 100mm form factor enables standard fab processing. The ~1nm Ra surface allows atomic-level direct bonding for massive arrays of RF or power chips with integrated diamond heat sinks.

Advanced Test Chucks & Probe Cards

Wafer-level testing of 1000W+ HPC chips

Prevents unpackaged semiconductor chips from self-destructing due to overheating during high-current fab testing, dramatically increasing yield rates.

GaN-on-Diamond

GaN-on-Diamond for CPO Laser Drivers

Gallium Nitride (GaN) on Diamond substrates are ideal for CPO laser driver ICs. GaN provides high electron mobility for high-frequency operation, while diamond provides extreme thermal conductivity to handle the heat load from dense laser arrays.

The 100mm SCD wafer form factor enables standard fab processing for GaN-on-Diamond heteroepitaxy, making it viable for high-volume CPO optical engine production.

GaN-on-Diamond Benefits for CPO

  • • High-frequency operation for 200G SerDes laser drivers
  • • Extreme thermal management for dense CW laser arrays
  • • 100mm wafer form factor for volume production
  • • Atomic-level surface finish for direct bonding

Standard Size

Ø 100mm × ~1mm

Standard Dimensions

While we offer Custom DFM for exact footprints, our most frequently manufactured configurations are:

Geometry Dimensions Typical Thickness Surface Finish
100mm Round Wafer Ø 100mm × ~1mm 300–500 µm Ra ~1nm (Epi-Ready)
60×60mm Plate 60×60mm 200–500 µm Ra ~5nm (Mechanical)
80×80mm Plate 80×80mm 300–500 µm Ra ~1nm (Epi-Ready)
Custom Rectangular Up to 100×100mm 100–500 µm Custom lapping available

Need Custom Dimensions or Shape?

We offer custom lapping, custom geometries (octagonal, irregular), and NRE for specialized applications. Contact us with your requirements.