Standard metal lids reflect EMI, causing devastating internal crosstalk. Our BDD substrate absorbs electromagnetic energy and instantly converts it to heat.
Unlike metal lids that bounce high-frequency signals back onto the die, our BDD lid absorbs stray EMI and prevents cavity resonance.
1000–2000 W/m·K thermal conductivity draws massive heat loads away from the silicon junction without electrical conduction.
Precisely control Boron doping concentration to tune microwave attenuation from 0.1 dB/mm to 5.0 dB/mm.
Ordinary pure diamond is an electrical insulator and is completely transparent to microwaves, offering zero EMI attenuation. To solve extreme thermal and signal integrity challenges in next-generation AI data centers, we engineered a diamond plate that acts as a tunable microwave attenuator.
By precisely controlling the Boron doping concentration in our proprietary patent-pending CVD process, we created a diamond plate that absorbs electromagnetic energy in the 1 GHz to 100 GHz range and instantly converts it to heat—all while acting as an ultra-high thermal conductivity heatsink.
While we specialize in Custom DFM to fit your exact footprint, we frequently manufacture this patent-pending BDD technology in dimensions tailored to industry-standard packaging.
| Dimensions (mm) | Thickness | Target Applications |
|---|---|---|
| 10 × 10 to 20 × 20 | 100–300 µm | 5G/6G mmWave ASICs, Silicon Photonics (SiPh) dies, bare-die RF amplifiers |
| 25 × 25 to 40 × 40 | 200–400 µm | PCIe Gen 5/6 Switches, NVLink Retimers, SerDes packaging lids |
| 50 × 50 to 80 × 80 | 300–500 µm | AI GPU lids (OAM/SXM form factors), 51.2T network switch ASICs |
| Up to 100mm wafer-scale | 100–500 µm | Wafer-level packaging, multi-chip module (MCM) baseplates |
Engineered for the most demanding high-frequency, high-power applications in AI and communications infrastructure.
Direct-to-die lids for 1000W+ AI accelerators
Standard metal lids bounce high-frequency signals back onto the die. Our BDD lid absorbs stray EMI, preventing cavity resonance and internal crosstalk, while drawing massive heat loads away from the silicon junction.
PCIe Gen 5/6 & NVLink SerDes and retimer chips
Absorbs signal noise in the critical 1–100 GHz band, ensuring maximum data throughput and signal integrity without sacrificing the thermal budget required by high-speed switching.
Telecommunication basestation chip packaging
Replaces bulky multi-component assemblies (separate heat sinks + microwave absorbers) with a single monolithic diamond layer, dramatically shrinking the module footprint.
BDD heat spreaders provide EMI absorption and thermal spreading for CPO optical engines. The PIC (Photonic Integrated Circuit) and EIC (Electronic IC) chiplets generate both heat and high-frequency noise that BDD handles simultaneously.
Silicon Photonics Thermal Management
Individual BDD lids for PIC chiplets absorb 1-100 GHz microwave interference from dense optical modulators while spreading heat from laser diodes.
6C Standard Sizes
8×16, 9×18, 10×20mm
CMOS Driver/TIA Circuitry
EIC chiplets (CMOS drivers, TIAs) operate at high frequencies with switching noise. BDD absorption prevents cross-talk between dense electronic and photonic circuits.
6C Standard Sizes
8×16, 9×18, 10×20mm
Multi-Chip Module Integration
Full MCM modules combining PIC + EIC + support dies require large-area BDD lids for thermal spreading across the complete optical engine assembly.
6C Standard Sizes
8×64, 9×72, 10×80mm