MP915C
25-100 kW Microwave Plasma CVD System
Advantages
- Large deposition area for semiconductor industry or jewellery industry
- High-purity diamond
- High growth rate
- Non-contamination
- Precise doping control
- Excellent process stability & repeatability
- High reliability
- Wide-range process control
Specifications
- Microwave power 25-100kW
- Motorized translation stage z-axis adjustable in situ during diamond growth
- Graphical User interface (GUI) provides multiple screens for active user control of process parameters and for process monitoring. Internet control and monitoring is available
- Levels of process and safety alarms allow unattended and safe operation of the system
- Remote process monitoring option
- Programmable operation supported by step recipe
- Six digitally controlled MFC manifolds.
- EP tubing and VCR connectors for gas delivery system
- Automatic pressure control
- PC and electronic is backup by UPS
- > 7 x Optical ports
- 2-color IR pyrometer
